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high-speed rdc teller scanners teller capture scanner – tellerscan® ts – high-speed teller capture scanner smartsource® pro elite – modern and efficient teller capture scanner tellerscan® ts – our most popular teller capture scanner smartsource® professional – general-purpose teller scanner network-ready devices

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high-speed rdc teller scanners teller capture scanner – tellerscan® ts – high-speed teller capture scanner smartsource® pro elite – modern and efficient teller capture scanner tellerscan® ts – our most popular teller capture scanner smartsource® professional – general-purpose teller scanner network-ready devices

network scanning attachment full-page scanners smartsource® adaptive – full-page check / document scanner smartsource micro adaptive – compact full-page check scanner specialty scanners scanbox – kiosk and self-service platform quantum ds – desktop reader-sorter ultraviolet check scanners – dual uv and optical...

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with μm and then μm gate lengths in . [ ] [ ] their original mosfet devices also had a gate oxide thickness of nm . [ ] however, the nmos devices were impractical, and only the pmos type were practical working devices. [ ] a more practical nmos process was developed several years later. nmos was initially

, which are less commonly used than the standard enhancement-mode devices already described. these are mosfet devices that are doped so that a channel exists even with zero voltage from gate to source. to control the channel, a negative voltage is applied to the gate (for an n-channel device), depleting...

https://en.wikipedia.org/wiki/MOSFET

with μm and then μm gate lengths in . [ ] [ ] their original mosfet devices also had a gate oxide thickness of nm . [ ] however, the nmos devices were impractical, and only the pmos type were practical working devices. [ ] a more practical nmos process was developed several years later. nmos was initially

, which are less commonly used than the standard enhancement-mode devices already described. these are mosfet devices that are doped so that a channel exists even with zero voltage from gate to source. to control the channel, a negative voltage is applied to the gate (for an n-channel device), depleting...

https://en.wikipedia.org/wiki/MOS_capacitor

with μm and then μm gate lengths in . [ ] [ ] their original mosfet devices also had a gate oxide thickness of nm . [ ] however, the nmos devices were impractical, and only the pmos type were practical working devices. [ ] a more practical nmos process was developed several years later. nmos was initially

, which are less commonly used than the standard enhancement-mode devices already described. these are mosfet devices that are doped so that a channel exists even with zero voltage from gate to source. to control the channel, a negative voltage is applied to the gate (for an n-channel device), depleting...

https://en.wikipedia.org/wiki/MOSFET_scaling

with μm and then μm gate lengths in . [ ] [ ] their original mosfet devices also had a gate oxide thickness of nm . [ ] however, the nmos devices were impractical, and only the pmos type were practical working devices. [ ] a more practical nmos process was developed several years later. nmos was initially

, which are less commonly used than the standard enhancement-mode devices already described. these are mosfet devices that are doped so that a channel exists even with zero voltage from gate to source. to control the channel, a negative voltage is applied to the gate (for an n-channel device), depleting...

https://en.wikipedia.org/wiki/Metal%E2%80%93oxide%E2%80%93semiconductor

with μm and then μm gate lengths in . [ ] [ ] their original mosfet devices also had a gate oxide thickness of nm . [ ] however, the nmos devices were impractical, and only the pmos type were practical working devices. [ ] a more practical nmos process was developed several years later. nmos was initially

, which are less commonly used than the standard enhancement-mode devices already described. these are mosfet devices that are doped so that a channel exists even with zero voltage from gate to source. to control the channel, a negative voltage is applied to the gate (for an n-channel device), depleting...

https://en.wikipedia.org/wiki/Metal%E2%80%93oxide%E2%80%93semiconductor_field-effect_transistor

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