Search Results for: Insulated electric conductors
"insulated gate field effect transistors fabricated using the gate as source-drain mask". ieee international electron devices meeting, faggin, f., klein, t., and vadasz, l.: "insulated gate field effect transistor integrated circuits with silicon gates". ieee international electron devices meeting, washington
actually the self-aligned gate mosfet was invented by robert w. bower u.s. , issued october , , filed october , . the bell labs kerwin et al patent was not filed until march , several months after the r. w. bower and h. d. dill published and presented the first publication of this work entitled insulated...
https://en.wikipedia.org/wiki/Silicon-gate
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