Search Results for: Light emitting diode
projects concentrated on si, gaas, and inp based systems, with emphasis on heteroepitaxy with atomic scale precision. device oriented projects have been the development of ultrafast and low-noise iii-v hetero-field-effect-transistors, laser diodes in the wavelength range from nm to . μm, vertical emitting
projects concentrated on si, gaas, and inp based systems, with emphasis on heteroepitaxy with atomic scale precision. device oriented projects have been the development of ultrafast and low-noise iii-v hetero-field-effect-transistors, laser diodes in the wavelength range from nm to . μm, vertical emitting...
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