Furnaces use dielectric loss

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spare parts induction spare parts ladles spare parts eaf spare parts rolling mills spare parts heating elements for electric furnaces laboratory furnace parts thermocouple tubes boiler tubes & parts industrial plant and machinery grinding and crushing machinery parts pulverizer machines ball mills batching...

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their work. the technique they developed is known as oxide diffusion masking, which would later be used in the fabrication of mosfet devices. at bell labs, the importance of frosch's technique was immediately realized since silicon oxides are much more stable than germanium oxides, have better dielectric

circuit (ic) chips. [ ] the following year, john l. moll described the mos capacitor at stanford university . [ ] atalla's co-workers j.r. ligenza and w.g. spitzer, who studied the mechanism of thermally grown oxides, managed to fabricate a high quality si/ sio stack, [ ] with atalla and kahng making use...

https://en.wikipedia.org/wiki/MOSFET

their work. the technique they developed is known as oxide diffusion masking, which would later be used in the fabrication of mosfet devices. at bell labs, the importance of frosch's technique was immediately realized since silicon oxides are much more stable than germanium oxides, have better dielectric

circuit (ic) chips. [ ] the following year, john l. moll described the mos capacitor at stanford university . [ ] atalla's co-workers j.r. ligenza and w.g. spitzer, who studied the mechanism of thermally grown oxides, managed to fabricate a high quality si/ sio stack, [ ] with atalla and kahng making use...

https://en.wikipedia.org/wiki/MOS_capacitor

their work. the technique they developed is known as oxide diffusion masking, which would later be used in the fabrication of mosfet devices. at bell labs, the importance of frosch's technique was immediately realized since silicon oxides are much more stable than germanium oxides, have better dielectric

circuit (ic) chips. [ ] the following year, john l. moll described the mos capacitor at stanford university . [ ] atalla's co-workers j.r. ligenza and w.g. spitzer, who studied the mechanism of thermally grown oxides, managed to fabricate a high quality si/ sio stack, [ ] with atalla and kahng making use...

https://en.wikipedia.org/wiki/MOSFET_scaling

their work. the technique they developed is known as oxide diffusion masking, which would later be used in the fabrication of mosfet devices. at bell labs, the importance of frosch's technique was immediately realized since silicon oxides are much more stable than germanium oxides, have better dielectric

circuit (ic) chips. [ ] the following year, john l. moll described the mos capacitor at stanford university . [ ] atalla's co-workers j.r. ligenza and w.g. spitzer, who studied the mechanism of thermally grown oxides, managed to fabricate a high quality si/ sio stack, [ ] with atalla and kahng making use...

https://en.wikipedia.org/wiki/Metal%E2%80%93oxide%E2%80%93semiconductor

their work. the technique they developed is known as oxide diffusion masking, which would later be used in the fabrication of mosfet devices. at bell labs, the importance of frosch's technique was immediately realized since silicon oxides are much more stable than germanium oxides, have better dielectric

circuit (ic) chips. [ ] the following year, john l. moll described the mos capacitor at stanford university . [ ] atalla's co-workers j.r. ligenza and w.g. spitzer, who studied the mechanism of thermally grown oxides, managed to fabricate a high quality si/ sio stack, [ ] with atalla and kahng making use...

https://en.wikipedia.org/wiki/Metal%E2%80%93oxide%E2%80%93semiconductor_field-effect_transistor

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