Radio broadcast receivers without an external power source

Radio broadcast receivers without an external power source

Search Results for: Radio broadcast receivers without an external power source
battery or supercapacitor). one basic technique to reduce the average power consumption is "duty cycle" switching the operation between long ultra-low-power sleep mode and short high-performance mode. based on this method, advanced systems have recently been developed by suppressing power consumption
special issue include (but are not limited to): analog or digital circuit design techniques to enable low-power systems; ultra-low-power circuit designs for standby-mode operation; energy-efficient circuit designs for active-mode operation; circuit designs for energy harvesting and power conversion;...
https://www.mdpi.com/journal/electronics/special_issues/circuit_designs
components additional components in-building antennas passive devices microwave antennas & accessories point-to-point (ptp) microwave antennas elliptical waveguide connectors elliptical waveguide tools elliptical waveguides pressurization rectangular & flexible-twistable waveguides accessories dc power
supplies modules racks back to products broadband & access network systems cable headend optics platforms inside plant optical passives optical amplifiers platforms receivers software transmitters cmts & ccap ccap cmts remote phy devices (rpd) ip switches for distributed access architectures (daa) virtualized...
https://www.commscope.com/product-type/splitters-combiners-multiplexers/filter-tower-mounted-amplifier-tma-products/attenuators/
components additional components in-building antennas passive devices microwave antennas & accessories point-to-point (ptp) microwave antennas elliptical waveguide connectors elliptical waveguide tools elliptical waveguides pressurization rectangular & flexible-twistable waveguides accessories dc power
supplies modules racks back to products broadband & access network systems cable headend optics platforms inside plant optical passives optical amplifiers platforms receivers software transmitters cmts & ccap ccap cmts remote phy devices (rpd) ip switches for distributed access architectures (daa) virtualized...
https://www.commscope.com/product-type/structural-support-tools-accessories/weatherproofing-accessories/cold-shrink-kits/
be either p or n type, but they must both be of the same type, and of opposite type to the body region. the source and drain (unlike the body) are highly doped as signified by a "+" sign after the type of doping. if the mosfet is an n-channel or nmos fet, then the source and drain are n+ regions and
very thin, the channel is referred to as an ultrathin channel region with the source and drain regions formed on either side in or above the thin semiconductor layer. other semiconductor materials may be employed. when the source and drain regions are formed above the channel in whole or in part, they...
https://en.wikipedia.org/wiki/MOSFET
be either p or n type, but they must both be of the same type, and of opposite type to the body region. the source and drain (unlike the body) are highly doped as signified by a "+" sign after the type of doping. if the mosfet is an n-channel or nmos fet, then the source and drain are n+ regions and
very thin, the channel is referred to as an ultrathin channel region with the source and drain regions formed on either side in or above the thin semiconductor layer. other semiconductor materials may be employed. when the source and drain regions are formed above the channel in whole or in part, they...
https://en.wikipedia.org/wiki/MOS_capacitor
be either p or n type, but they must both be of the same type, and of opposite type to the body region. the source and drain (unlike the body) are highly doped as signified by a "+" sign after the type of doping. if the mosfet is an n-channel or nmos fet, then the source and drain are n+ regions and
very thin, the channel is referred to as an ultrathin channel region with the source and drain regions formed on either side in or above the thin semiconductor layer. other semiconductor materials may be employed. when the source and drain regions are formed above the channel in whole or in part, they...
https://en.wikipedia.org/wiki/MOSFET_scaling
be either p or n type, but they must both be of the same type, and of opposite type to the body region. the source and drain (unlike the body) are highly doped as signified by a "+" sign after the type of doping. if the mosfet is an n-channel or nmos fet, then the source and drain are n+ regions and
very thin, the channel is referred to as an ultrathin channel region with the source and drain regions formed on either side in or above the thin semiconductor layer. other semiconductor materials may be employed. when the source and drain regions are formed above the channel in whole or in part, they...
https://en.wikipedia.org/wiki/Metal%E2%80%93oxide%E2%80%93semiconductor
be either p or n type, but they must both be of the same type, and of opposite type to the body region. the source and drain (unlike the body) are highly doped as signified by a "+" sign after the type of doping. if the mosfet is an n-channel or nmos fet, then the source and drain are n+ regions and
very thin, the channel is referred to as an ultrathin channel region with the source and drain regions formed on either side in or above the thin semiconductor layer. other semiconductor materials may be employed. when the source and drain regions are formed above the channel in whole or in part, they...
https://en.wikipedia.org/wiki/Metal%E2%80%93oxide%E2%80%93semiconductor_field-effect_transistor
menu main navigation why sensata our products industries resources contact us get a quote about careers investors english back look up a part # browse our products contactors & high-voltage relays electrical protection control force inverters & chargers motors & actuators position sensors & encoders power
closed contact position to the normally open contact position. actuation pressure: the pressure at which the electrical element is operated on increasing pressure. afcb: arc–fault circuit breaker. afci: arc–fault circuit interrupter. algorithm: a specific procedure for solving mathematical problems. an...
http://sensata.com/resources/glossary
menu main navigation why sensata our products industries resources contact us get a quote about careers investors english back look up a part # browse our products contactors & high-voltage relays electrical protection control force inverters & chargers motors & actuators position sensors & encoders power
closed contact position to the normally open contact position. actuation pressure: the pressure at which the electrical element is operated on increasing pressure. afcb: arc–fault circuit breaker. afci: arc–fault circuit interrupter. algorithm: a specific procedure for solving mathematical problems. an...
https://www.sensata.com/resources/glossary