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rf devices featured solutions pecvd low-temperature pecvd for sio & sinx deposition cathode pecvd for high-rate sio and sinx deposition plasma etching compound semiconductor etching si drie for mems and tsv plasma dicing of si & iii-v (gaas/inp/gan) algan/gan etch for gan power device fabrication sic...
v. gaponenko stepanov institute of physics of the national academy of sciences of belarus nanoplasmonics: enhancement of light-matter interaction for sensing, lighting and li-fi applications . mehmet yilmaz national nanotechnology research center (unam) at bilkent university tensile testing mems devices...
provided a theoretical foundation to understand the trade-offs between signal-to-noise ratio , bandwidth , and error-free transmission in the presence of noise , in telecommunications technology. in the early s, renuka jindal at bell labs used information theory to study the noise behaviour of mos devices...